Intrinsic l/f Noise in Doped Silicon Thermistors for Cryogenic Calorimeters
نویسندگان
چکیده
We have characterized the intrinsic 1/f noise of ion-implanted silicon thermistors in the 0.05 – 0.5 K temperature range. This noise can have a significant effect on detector performance and needs to be taken into account in the design optimization of infrared bolometers and x-ray microcalorimeters. The noise can be reasonably well fit as ∆R/R fluctuations whose spectral density varies as 1/f and increases steeply with lower doping density and lower temperatures. The observed 1/f noise can be approximated as a resistance fluctuation: ∆R R T T V f e T 2 2 0 2 453 5 2 0 9 18 3 0 034 1 0 15 3 5 10 0 / . / ( / . ) / . . ( . . log( )) = ( ) × ( ) − + − K K cm therm .
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تاریخ انتشار 2003